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HIP6301VCBZ Datenblatt(PDF) 15 Page - Renesas Technology Corp

Teilenummer HIP6301VCBZ
Bauteilbeschribung  Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controller
PDF  20 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6301VCBZ Datenblatt(HTML) 15 Page - Renesas Technology Corp

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HIP6301V, HIP6302V
FN9034 Rev 3.00
Page 15 of 20
May 5, 2008
turned OFF and Q2 is turned on. Because of the sawtooth
current component, the sampled current is different from the
average current per phase. Neglecting secondary effects,
the sampled current (ISAMPLE) can be related to the load
current (ILT) by Equation 5.
Where: ILT = total load current
n = the number of channels
Example: Using the previously given conditions, and
for ILT = 100A,
n= 4
Then ISAMPLE = 25.49A
As discussed previously, the voltage drop across each Q2
transistor at the point in time when current is sampled is
rDS(ON) (Q2) x ISAMPLE. The voltage at Q2’s drain, the
PHASE node, is applied through the RISEN resistor to the
HIP6301V ISEN pin. This pin is held at virtual ground, so the
current into ISEN is calculated in Equations 6 and 7:
Example: From the previous conditions,
where ILT
= 100A,
ISAMPLE
= 25.49A,
rDS(ON) (Q2)= 4m
Then: RISEN
= 2.04k and
ICURRENT TRIP = 165%
Short circuit ILT = 165A.
Channel Frequency Oscillator
The channel oscillator frequency is set by placing a resistor,
RT, to ground from the FS/DIS pin. Figure 12 is a curve
showing the relationship between frequency, FSW, and
resistor RT. To avoid pickup by the FS/DIS pin, it is important
to place this resistor next to the pin.
Layout Considerations
MOSFETs switch very fast and efficiently. The speed with
which the current transitions from one device to another
causes voltage spikes across the interconnecting
impedances and parasitic circuit elements. These voltage
spikes can degrade efficiency, radiate noise into the circuit
and lead to device overvoltage stress. Careful component
layout and printed circuit design minimizes the voltage
spikes in the converter. Consider, as an example, the turnoff
transition of the upper PWM MOSFET. Prior to turnoff, the
upper MOSFET was carrying channel current. During the
turnoff, current stops flowing in the upper MOSFET and is
picked up by the lower MOSFET. Any inductance in the
switched current path generates a large voltage spike during
the switching interval. Careful component selection, tight
layout of the critical components, and short, wide circuit
traces minimize the magnitude of voltage spikes. Contact
Intersil for evaluation board drawings of the component
placement and printed circuit board.
There are two sets of critical components in a DC/DC
converter using a HIP6301V or HIP6302V controller and a
HIP6601 family gate driver. The power components are the
most critical because they switch large amounts of energy.
Next are small signal components that connect to sensitive
nodes or supply critical bypassing current and signal coupling.
The power components should be placed first. Locate the
input capacitors close to the power switches. Minimize the
length of the connections between the input capacitors, CIN,
and the power switches. Locate the output inductors and
output capacitors between the MOSFETs and the load.
Locate the gate driver close to the MOSFETs.
The critical small components include the bypass capacitors
for VCC and PVCC on the gate driver ICs. Locate the bypass
capacitor, CBP, for the controller close to the device. It is
especially important to locate the resistors associated with the
input to the amplifiers close to their respective pins, since they
represent the input to feedback amplifiers. Resistor RT, that
sets the oscillator frequency should also be located next to the
associated pin. It is especially important to place the RSEN
resistor(s) at the respective ISEN terminals.
ISAMPLE
ILT
n
--------
VIN
V
CORE
3V
2
CORE
–
+
6L
 F
SW
 V
IN

------------------------------------------------------------------------------------
=
(EQ. 5)
ISENSE
ISAMPLE
r
DS ON
 Q2

RISEN
-------------------------------------------------------------------
=
(EQ. 6)
RISEN
ISAMPLE
r
DS ON
 Q2

50
A
-------------------------------------------------------------------
=
(EQ. 7)
50
100
10
20
200
500
1k
5k
10k
2k
1
2
5
10
20
50
100
200
500
1,000
CHANNEL OSCILLATOR FREQUENCY, FSW (Hz)
FIGURE 12. RESISTANCE RT vs FREQUENCY



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