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HIP6301VCBZ Datenblatt(PDF) 15 Page - Renesas Technology Corp |
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HIP6301VCBZ Datenblatt(HTML) 15 Page - Renesas Technology Corp |
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15 / 20 page ![]() HIP6301V, HIP6302V FN9034 Rev 3.00 Page 15 of 20 May 5, 2008 turned OFF and Q2 is turned on. Because of the sawtooth current component, the sampled current is different from the average current per phase. Neglecting secondary effects, the sampled current (ISAMPLE) can be related to the load current (ILT) by Equation 5. Where: ILT = total load current n = the number of channels Example: Using the previously given conditions, and for ILT = 100A, n= 4 Then ISAMPLE = 25.49A As discussed previously, the voltage drop across each Q2 transistor at the point in time when current is sampled is rDS(ON) (Q2) x ISAMPLE. The voltage at Q2’s drain, the PHASE node, is applied through the RISEN resistor to the HIP6301V ISEN pin. This pin is held at virtual ground, so the current into ISEN is calculated in Equations 6 and 7: Example: From the previous conditions, where ILT = 100A, ISAMPLE = 25.49A, rDS(ON) (Q2)= 4m Then: RISEN = 2.04k and ICURRENT TRIP = 165% Short circuit ILT = 165A. Channel Frequency Oscillator The channel oscillator frequency is set by placing a resistor, RT, to ground from the FS/DIS pin. Figure 12 is a curve showing the relationship between frequency, FSW, and resistor RT. To avoid pickup by the FS/DIS pin, it is important to place this resistor next to the pin. Layout Considerations MOSFETs switch very fast and efficiently. The speed with which the current transitions from one device to another causes voltage spikes across the interconnecting impedances and parasitic circuit elements. These voltage spikes can degrade efficiency, radiate noise into the circuit and lead to device overvoltage stress. Careful component layout and printed circuit design minimizes the voltage spikes in the converter. Consider, as an example, the turnoff transition of the upper PWM MOSFET. Prior to turnoff, the upper MOSFET was carrying channel current. During the turnoff, current stops flowing in the upper MOSFET and is picked up by the lower MOSFET. Any inductance in the switched current path generates a large voltage spike during the switching interval. Careful component selection, tight layout of the critical components, and short, wide circuit traces minimize the magnitude of voltage spikes. Contact Intersil for evaluation board drawings of the component placement and printed circuit board. There are two sets of critical components in a DC/DC converter using a HIP6301V or HIP6302V controller and a HIP6601 family gate driver. The power components are the most critical because they switch large amounts of energy. Next are small signal components that connect to sensitive nodes or supply critical bypassing current and signal coupling. The power components should be placed first. Locate the input capacitors close to the power switches. Minimize the length of the connections between the input capacitors, CIN, and the power switches. Locate the output inductors and output capacitors between the MOSFETs and the load. Locate the gate driver close to the MOSFETs. The critical small components include the bypass capacitors for VCC and PVCC on the gate driver ICs. Locate the bypass capacitor, CBP, for the controller close to the device. It is especially important to locate the resistors associated with the input to the amplifiers close to their respective pins, since they represent the input to feedback amplifiers. Resistor RT, that sets the oscillator frequency should also be located next to the associated pin. It is especially important to place the RSEN resistor(s) at the respective ISEN terminals. ISAMPLE ILT n -------- VIN V CORE 3V 2 CORE – + 6L F SW V IN ------------------------------------------------------------------------------------ = (EQ. 5) ISENSE ISAMPLE r DS ON Q2 RISEN ------------------------------------------------------------------- = (EQ. 6) RISEN ISAMPLE r DS ON Q2 50 A ------------------------------------------------------------------- = (EQ. 7) 50 100 10 20 200 500 1k 5k 10k 2k 1 2 5 10 20 50 100 200 500 1,000 CHANNEL OSCILLATOR FREQUENCY, FSW (Hz) FIGURE 12. RESISTANCE RT vs FREQUENCY |
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