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LP5018 Datenblatt(PDF) 6 Page - Texas Instruments |
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LP5018 Datenblatt(HTML) 6 Page - Texas Instruments |
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6 / 49 page ![]() 6 LP5018, LP5024 SLVSEB8 – MARCH 2018 www.ti.com Product Folder Links: LP5018 LP5024 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 7 Specifications 7.1 Absolute Maximum Ratings over operating ambient temperature range (unless otherwise noted) (1) MIN MAX UNIT Voltage on ADDRx, EN, IREF, OUTx, SCL, SDA, VCC –0.3 6 V Voltage on VCAP –0.3 2 V Continuous power dissipation Internally limited Junction temperature, TJ-MAX –40 125 °C Storage temperature, Tstg –65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±1500 V may actually have higher performance. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±500 V may actually have higher performance. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±500 7.3 Recommended Operating Conditions over operating ambient temperature range (unless otherwise noted) MIN MAX UNIT Input voltage on VCC 2.7 5.5 V Voltage on OUTx 0 5.5 V Voltage on ADDRx, EN, SDA, SCL 0 5.5 V Operating ambient temperature, TA –40 85 °C (1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics. 7.4 Thermal Information THERMAL METRIC(1) LP5018 or LP5024 UNIT RSM (QFN) 32 PINS RθJA Junction-to-ambient thermal resistance 36.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 34.8 °C/W RθJB Junction-to-board thermal resistance 15.9 °C/W ψJT Junction-to-top characterization parameter 0.9 °C/W ψJB Junction-to-board characterization parameter 16 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 6.3 °C/W |
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