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IRFS3307 Datenblatt(PDF) 4 Page - International Rectifier

Teilenummer IRFS3307
Bauteilbeschribung  HEXFET Power MOSFET
PDF  11 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFS3307 Datenblatt(HTML) 4 Page - International Rectifier

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IRFB3307/IRFS3307/IRFSL3307
4
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
Limited By Package
0
1020
3040
5060
7080
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
ID
TOP
8.6A
12A
BOTTOM 75A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
70
75
80
85
90
95
100
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC



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