K4S643233F datasheet(4/8 Pages) SAMSUNG

4 / 8 page

K4S643233F-S(D)E/N/I/P

Rev. 1.5 Dec. 2002

CMOS SDRAM

DC OPERATING CONDITIONS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25

°C to 85°C for Extended, -40°C to 85°C for Industrial)

Notes :

1. VIH (max) = 5.3V AC. The overshoot voltage duration is

≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is

≤ 3ns.

3. Any input 0V

≤ VIN ≤ VDDQ.

Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.

4. Dout is disabled, 0V

≤ VOUT ≤ VDDQ.

Parameter

Symbol

Min

Typ

Max

Unit

Note

Supply voltage

VDD

2.7

3.0

3.6

VDDQ

2.7

3.0

3.6

Input logic high voltage

VIH

2.2

3.0

VDDQ+0.3

Input logic low voltage

VIL

-0.3

0.5

Output logic high voltage

VOH

2.4

IOH = -2mA

Output logic low voltage

VOL

0.4

IOL = 2mA

Input leakage current

ILI

-10

ABSOLUTE MAXIMUM RATINGS

Notes :

Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.

Functional operation should be restricted to recommended operating condition.

Exposure to higher than recommended voltage for extended periods of time could affect device reliability.

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-1.0 ~ 4.6

Voltage on V DD supply relative to Vss

VDD , VDDQ

-1.0 ~ 4.6

Storage temperature

TSTG

-55 ~ +150

°C

Power dissipation

Short circuit current

IOS

CAPACITANCE (VDD = 3.0V & 3.3, TA = 23

°C, f = 1MHz, VREF =0.9V ± 50 mV)

Symbol

Min

Max

Unit

Note

Clock

CCLK

4.0

RAS, CAS, WE, CS, CKE, DQM0~ DQM3

CIN

4.0

Address(A0 ~ A10, BA0 ~ BA1)

CADD

4.0

DQ0 ~ DQ31

COUT

6.0

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