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S8C5H30L Datenblatt(PDF) 1 Page - STMicroelectronics |
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S8C5H30L Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 11 page ![]() N-CHANNEL 30V - 0.018 Ω - 8A SO-8 P-CHANNEL 30V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE StripFET™ III MOSFET 1/11 September 2004 STS8C5H30L Table 1: General Features s TYPICAL RDS(on) (N-Channel) = 0.018 Ω s TYPICAL RDS(on) (P-Channel) = 0.045 Ω s CONDUCTION LOSSES REDUCED s SWITCHING LOSSES REDUCED s LOW THRESHOLD DRIVE s STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DESCRIPTION This MOSFET is the latest development of STMi- croelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES s DC MOTOR DRIVE Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS RDS(on) ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω 8 A 5 A SO-8 PART NUMBER MARKING PACKAGE PACKAGING STS8C5H30L S8C5H30L SO-8 TAPE & REEL Rev. 2 |
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