RIC7113A4

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5

International Rectifier radiation hardened Gate Drivers have been characterized in heavy ion environment

for Single Event Effects (SEE). Single Event Effects characterization data is illustrated below. For Static Bias

Test Conditions refer to figure 8.

Single Event Effect Safe Operating Area

Ion

LET

Energy

Angle

V

S

(V)

(MeV)

(degrees)

@V

BS

=-10V

@V

BS

=-15V

@V

BS

=-17.5V

Br

37

284

0

400

400

400

I

60

344

0

325

250

200

Au

82

346

0

250

200

175

I

85

344

45

400

400

350

Au

100

346

35

400

400

350

Note: VCC/VDD = 20V, except for LET=100, then VCC/VDD = 17.5V

Single Event Effect, Safe Operating Area

Radiation characteristics

STATIC BIAS

0

50

100

150

200

250

300

350

400

450

-10

-15

-17.5

VB (V)

Br, 0° angle

I, 0° angle

Au, 0° angle

I, 45° angle

Au, 35° angle