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TLGE174P Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer TLGE174P
Bauteilbeschribung  TOSHIBA LED Lamp InGaAP Green Light Emission
PDF  4 Pages
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLGE174P Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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TLGE174P
2002-09-25
2
Electrical And Optical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 20mA
2.27
2.8
V
Reverse current
IR
VR = 4V
50
µA
Luminous intensity
IV
IF = 20mA
(Note)
476
1400
mcd
Peak emission wavelength
λp
IF = 20mA
574
nm
Spectral line half width
∆λ
IF = 20mA
11
nm
Dominant wavelength
λd
IF = 20mA
571
nm
(Note): Lamps are classified into the following ranks according to their luminous intensity.
Measurement tolerance for each limit is ±15%.
R: 560
-1120mcd, S: 1000-2000mcd, T: 1800-3600mcd
Precaution
Please be careful of the followings
· Soldering temperature: 260°C max
Soldering time: 3 s max
(Soldering portion of lead: Up to 2mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.



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