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AN11034 Datenblatt(PDF) 6 Page - NXP Semiconductors |
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AN11034 Datenblatt(HTML) 6 Page - NXP Semiconductors |
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6 / 14 page ![]() NXP Semiconductors AN11034 High Ohmic FM LNA AN11034 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev. 1.0 — 15 July 2011 6 of 14 3. Measurement results 3.1 Measurement results Table 2. Typical measurement results measured on the evaluation board Tamb = 25 °C; Vcc = Ven = Vrb = 2.85 V; ICC(tot) = 3.2 mA [1]; f = 100 MHz; ZS = ZL = 50 Ω unless otherwise specified. All measurements are done with SMA-connectors as reference plane. Parameter Symbol Value Unit Remark supply voltage Vcc 2.85 V supply current ICC(tot) [1] 3.2 mA noise figure NF 1.2 dB insertion power gain │S21│2 13 dB input return loss RLin 0.5 dB output return loss RLout 16.5 dB input power at 1 dB gain compression Pi(1dB) -23 dBm output power at 1 dB gain compression Po(1dB) -11 dBm input third-order intercept point IP3I [2] -15 dBm output third-order intercept point IP3O [2] -2 dBm [1] ICC(tot) = ICC + IRF_OUT + IR_BIAS [2] The third order intercept point is measured at -30 dBm per tone at RF_IN (f1 = 100 MHz; f2 = 100.2 MHz) |
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