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MMF80R650PBTH Datenblatt(PDF) 2 Page - MagnaChip Semiconductor.

Teilenummer MMF80R650PBTH
Bauteilbeschribung  800V 0.65ohm N-channel MOSFET
PDF  10 Pages
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Hersteller  MGCHIP [MagnaChip Semiconductor.]
Direct Link  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MMF80R650PBTH Datenblatt(HTML) 2 Page - MagnaChip Semiconductor.

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MMF80R650PB Datasheet
Jan. 2018 Revision 1.0
MagnaChip Semiconductor Ltd.
3
Parameter
Symbol
Rating
Unit
Note
Drain
– Source voltage
VDSS
800
V
Gate
– Source voltage
VGSS
±30
V
Continuous drain current
(1)
ID
8
A
TC=25
oC
5.05
A
TC=100
oC
Pulsed drain current
(2)
IDM
24
A
Power dissipation
PD
32
W
Single - pulse avalanche energy
EAS
340
mJ
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
Diode dv/dt ruggedness
(3)
dv/dt
15
V/ns
Storage temperature
Tstg
-55 ~150
oC
Maximum operating junction
temperature
Tj
150
oC
1)
ID limited by maximum junction temperature.
2)
Pulse width tP limited by Tj,max
3)
ISD ≤ ID, VDS peak ≤ V(BR)DSS
Parameter
Symbol
Value
Unit
Thermal resistance, junction-case max
Rthjc
3.9
oC/W
Thermal resistance, junction-ambient max
Rthja
62.5
oC/W
 Thermal Characteristics
 Absolute Maximum Rating (Tc=25oC unless otherwise specified)



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