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DS

75

DSI

75

DSA 75

DSAI 75

20170323b

V

RSM

V

(BR)min

①

V

RRM

Anode

Cathode

V

V

V

on stud

on stud

1300

-

1200

DS 75-12B

DSI 75-12B

1300

1300

1200

DSA 75-12B

DSAI 75-12B

1700

1760

1600

DSA 75-16B

DSAI 75-16B

1900

1950

1800

DSA 75-18B

DSAI 75-18B

①

Only for Avalanche Diodes

V

RRM

= 1200-1800 V

I

I

Features

●

International standard package,

JEDEC DO-203 AB (DO-5)

●

Planar glassivated chips

Applications

●

High power rectifiers

●

Field supply for DC motors

●

Power supplies

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power

cycling

●

Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

Rectifier Diode

Avalanche Diode

A = Anode

C = Cathode

DO-203 AB

1/4-28UNF

DS

DSI

DSA

DSAI

C

A

A

C

Symbol

Test Conditions

Maximum Ratings

I

F(RMS)

T

VJ

= T

VJM

160

A

I

F(AV)M

T

110

A

P

RSM

DSA(I) types, T

20

kW

I

FSM

T

VJ

= 45°C;

t = 10 ms (50 Hz), sine

1400

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

1500

A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

1250

A

V

R

= 0

t = 8.3 ms (60 Hz), sine

1310

A

T

VJ

= 45°C

t = 10 ms (50 Hz), sine

9800

V

R

= 0

t = 8.3 ms (60 Hz), sine

9450

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine

7820

V

R

= 0

t = 8.3 ms (60 Hz), sine

7210

T

VJ

-40...+180

°

C

T

VJM

180

°

C

T

stg

-40...+180

°

C

M

d

Mounting torque

2.4-4.5

Nm

21-40

lb.in.

Weight

21

g

Symbol

Test Conditions

Characteristic Values

I

R

T

VJ

= T

≤

6

mA

V

F

I

F

= 150 A; T

≤

1.17

V

V

T0

For power-loss calculations only

0.75

V

r

T

T

VJ

= T

VJM

2

mΩ

R

thJC

DC current

0.5

K/W

R

thJH

DC current

0.9

K/W

d

S

Creepage distance on surface

4.05

mm

d

A

Strike distance through air

3.9

mm

a

Max. allowable acceleration

100