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UCS1600SG-S08-R Datenblatt(PDF) 7 Page - Unisonic Technologies

Teilenummer UCS1600SG-S08-R
Bauteilbeschribung  HIGH PERFORMANCE CURRENT MODE POWER SWITCH
PDF  8 Pages
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Hersteller  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
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UCS1600SG-S08-R Datenblatt(HTML) 7 Page - Unisonic Technologies

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UCS1600S
Preliminary
LINEAR INTEGRATED CIRCUIT
UNISONICTECHNOLOGIESCO.,LTD
7 of 8
www.unisonic.com.tw
QW-R103-122.c
FUNCTIONAL DESCRIPTION (Cont.)
(6) Driver Output Section
The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit
efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a
slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 16V Zener diode in
order to protect power MOSFET transistors against undesirable gate over voltage.
In addition to the gate drive control scheme mentioned, the gate drive strength can also be adjusted externally
by a resistor connected between VDD and VDDG, the falling edge of the Drain output can be well controlled. It provides
great flexibility for system EMI design.
(7) Inside power switch MOS transistor
Specific power MOS transistor parameter is as “POWER MOS TRANSISTOR SECTION” in electrical
characteristics table.



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