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IXFN38N80Q2 Datenblatt(PDF) 2 Page - IXYS Corporation

Teilenummer IXFN38N80Q2
Bauteilbeschribung  N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
PDF  5 Pages
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Hersteller  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN38N80Q2 Datenblatt(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS = 10 V; ID = 0.5 • ID25, pulse test
25
37
S
C
iss
8340
pF
C
oss
V
GS
= 0 V, V
DS = 25 V, f = 1 MHz
890
pF
C
rss
175
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
16
ns
t
d(off)
R
G = 1.0 Ω (External),
60
ns
t
f
12
ns
Q
g(on)
190
nC
Q
gs
V
GS
= 10 V, V
DS = 0.5 • VDSS, ID = 0.5 • ID25
44
nC
Q
gd
88
nC
R
thJC
0.17
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS = 0 V
38
A
I
SM
Repetitive; pulse width limited by T
JM
150
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
t
rr
250
ns
Q
RM
1
µC
I
RM
10
A
I
F = 25A, -di/dt = 100 A/µs, VR = 100 V
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46BSC
.215BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
IXFK 38N80Q2
IXFN 38N80Q2
IXFX 38N80Q2
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
SOT-227B miniBLOC Outline



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