| Datenblatt-Suchmaschine für elektronische Bauteile |
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IXI859 Datenblatt(PDF) 2 Page - IXYS Corporation |
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IXI859 Datenblatt(HTML) 2 Page - IXYS Corporation |
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2 / 5 page ![]() IXYS www.ixys.com 2 4/29/05 IXI858 / IXI859 SOIC-8 Pin Description Pin No. Pin Symbol I/O Description 1 VCC Supply Power input connects to a rectified high voltage source through a current limiting series resistor and filter capacitor to ground. Regulated 13 volt output when the charge pump is active. 2 VOUT Output Linear Regulator Output (IXI858 = 5.0V, IXI859 = 3.3V) 3 N/C No Connect 4 IN Input Gate Driver Input 5 GATE Output Gate Driver Output. Drives external power MOSFET. 6 GND Ground Ground Return 7 VSUP I/O Charge Pump Switch Input. Enables / disables the charge pump output. Requires a low ESR capacitor. 8 VCAP I/O Charge Pump Switch Output. Rectified charge pump output. Requires a low ESR capacitor. Absolute Maximum Ratings Symbol Parameter Min Max Units VCC DC Supply Voltage -0.4 +20.0 V VOUT Logic System Supply Voltage -0.4 +6.0 V VIN Gate Input Voltage -0.4 +6.0 V ISUP Continuous current into VSUP pin -200 +200 mA IPEAK Peak Current into VSUP -1 +1 A PD Power Dissipation 500 mW TJ Maximum Junction Temperature +150 oC TSTG Storage Temperature -65 +150 oC Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and affect its reliability. ESD Warning ESD (electrostatic discharge) sensitive device. Although the IXI858 / IXI859 feature proprietary ESD protection circuitry, permanent damage may be sustained if subjected to high energy electrostatic discharges. Proper ESD precautions are recommended to avoid performance degradation or loss of functionality. |
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