| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD414 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD414 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD414 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCBO Collector-Base Voltage IC=0.1mA, IE=0 120 V VCEO Collector-Emitter Voltage IC=1mA, IB=0 80 V VEBO Emitter-Base Voltage IE=0.1mA, IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB=50mA 0.3 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB=50mA 0.9 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 1.0 μ A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μ A hFE-1 DC Current Gain IC= 2mA ; VCE= 5V 20 hFE-2 DC Current Gain IC= 200mA ; VCE= 5V 40 320 hFE-2 Classifications S R Q P 40-80 60-120 100-200 160-320 |
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