| Datenblatt-Suchmaschine für elektronische Bauteile |
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8N65 Datenblatt(PDF) 5 Page - SUNMATE electronic Co., LTD |
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8N65 Datenblatt(HTML) 5 Page - SUNMATE electronic Co., LTD |
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5 / 8 page ![]() TYPICAL CHARACTERISTICS 10 1 10 0.1 1 Drain-to-Source Voltage, VDS (V) On-State Characteristics 0.1 2 Gate-Source Voltage, VGS (V) Transfer Characteristics 6 4 8 10 10 1 0.1 5.0V Notes: 1. 250µs Pulse Test 2. TC=25°C VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 100 Notes: 1. VDS=40V 2. 250µs Pulse Test 25°C 150°C 0 0 Drain Current, ID (A) 5 1 2 4 5 6 On-Resistance Variation vs. Drain 3 10 15 20 1 0.1 0.2 Source-Drain Voltage, VSD (V) Body Diode Forward Voltage vs. Source Current 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150°C 25°C Notes: 1. VGS=0V 2. 250µs Test VGS=20V VGS=10V Current and Gate Voltage TJ=25°C 1900 0 0.1 Drain-SourceVoltage, VDS (V) 1700 500 110 1500 1300 Capacitance Characteristics (Non-Repetitive) 0 Total Gate Charge, QG (nC) 5 15 25 8 10 12 10 6 4 2 0 VDS=120V VDS=520V VDS=300V 20 700 Ciss Coss Crss Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd Notes: 1. VGS=0V 2. f = 1MHz 1100 900 300 100 30 Gate Charge Characteristics ID=7.5A |
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