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2N6648 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2N6648
Bauteilbeschribung  isc Silicon PNP Darlingtion Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6648 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlingtion Power Transistor
2N6648
DESCRIPTION
·
With TO-3 packaging
·
Built-in base-emitter shunt resistors
·
Very high DC current gain
·
Complement to type 2N6648
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Electronic ignition
·
Alternator regulator
·
Motor controls
·
Power switching
·
Hammer drivers
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
ThermalResistance, Junction to Case
1.75
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IB
Base Current
-0.25
A
PC
Collector Power Dissipation@TC=25℃
100
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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