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2SB963 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SB963
Bauteilbeschribung  isc Silicon PNP Darlington Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB963 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
2SB963
DESCRIPTION
·
With TO-251(IPAK) packaging
·
Very high DC current gain
·
Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·
Complement to type 2SD1286
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
AC-DC motor control
·
Electronic ignition
·
Alternator regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-2
A
PT
Total Power Dissipation
10
W
Tj
Max.Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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