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3CD9A Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 3CD9A
Bauteilbeschribung  isc Silicon PNP Power Transistors
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3CD9A Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistors
3CD9A
DESCRIPTION
·
With TO-3 packaging
·
Large collector current
·
Low collector saturation voltage
·
High power dissipation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in DC-DC converter
·
Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.66
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-15
A
PC
Collector Power Dissipation@Tc=75℃
150
W
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃


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