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3DD159F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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3DD159F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 3DD159F DESCRIPTION · With TO-3 packaging · Large collector current · Low collector saturation voltage · High power dissipation · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter · Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.0 ℃ /W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ |
Ähnliche Teilenummer - 3DD159F |
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Ähnliche Beschreibung - 3DD159F |
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