| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3177 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3177 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC3177 DESCRIPTION · With TO-126 packaging · Low collector-to-emitter saturation voltage · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Relay drivers · High-speed inverters · Converters · Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SC3177 |
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Ähnliche Beschreibung - 2SC3177 |
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