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2SD2627LS Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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2SD2627LS Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SD2627LS No.6478-2/4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A VCE(sat) -- IC Collector Current, IC -- A hFE -- IC Base-to-Emitter Voltage, VBE -- V 0.1 3 0.1 1.0 2 3 5 2 3 5 7 5 7 2 3 57 2 3 57 1.0 10 3 2 1.0 10 0.1 1.0 10 23 5 7 2 3 5 7 5 7 3 2 5 -40 °C 25 °C Ta=120 °C VCE=5V IC / IB=5 25 °C Ta= --40°C 120°C IT01810 IT01812 IT01811 IT01813 0 1 357 9 0 24 6 8 1 2 3 4 5 6 10 0.2A 0.05A 0.4A 0.6A 0.8A 1.0A 1.2A 1.4A 1.6A 1.8A IC -- VCE IB=0 0.2 0 0.4 0.6 0.8 1.0 1.2 1.4 2 3 4 5 6 7 0 1 IC -- VBE VCE=5V Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.15A, IB=0.63A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=3.15A, IB=0.63A 1.5 V DC Current Gain hFE1VCE=5V, IC=0.5A 10 hFE2VCE=5V, IC=3.5A 5 8 Diode Forward Voltage VF IEC=6A 2 V Fall Time tf IC=2A, IB1=0.4A, IB2=--0.8A 0.3 µs Switching Time Test Circuit ++ PW=20 µs D.C. ≤1% 50 Ω INPUT RB VR RL=100Ω VCC=200V VBE= --2V IB1 IB2 470 µF 100 µF OUTPUT |
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