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STPS1L30 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STPS1L30
Bauteilbeschribung  LOW DROP POWER SCHOTTKY RECTIFIER
PDF  7 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS1L30 Datenblatt(HTML) 3 Page - STMicroelectronics

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Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
Figure
7:
Relative
variation
of
thermal
impedance junction to ambient versus pulse
duration
(epoxy
printed
circuit
board,
e(Cu)=35µm, recommended pad layout) (SMA)
Figure
8:
Relative
variation
of
thermal
impedance junction to ambient versus pulse
duration
(epoxy
printed
circuit
board,
e(Cu)=35µm, recommended pad layout) (SMB)
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
Figure
10:
Junction
capacitance
versus
reverse voltage applied (typical values)
I (A)
M
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
IM
t
δ=0.5
t(s)
T =25°C
a
T =50°C
a
T =100°C
a
1E-3
1E-2
1E-1
1E+0
0
2
4
6
8
10
I (A)
M
IM
t
δ=0.5
t(s)
T =25°C
a
T =50°C
a
T =100°C
a
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c)
th(j-c)
T
δ=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0
5
10
15
20
25
30
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =25°C
j
12
5
10
20
30
10
100
500
C(pF)
V (V)
R
F=1MHz
T =25°C
j



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