Elektronische Bauelemente

SMS2002-C

Ω

Ω

Ω

-Ch Enhancement Mode Power MOSFET

13-Dec-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Threshold Voltage

0.45

-

1

V

Forward Transconductance

-

10

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Zero Gate Voltage Drain Current

-

-

5

µA

-

-

100

Drain-Source On Resistance

4

-

-

140

m

Total Gate Charge

-

4.7

-

Gate-to-Source Charge

-

0.68

-

Gate-to-Drain Charge

-

1.3

-

nC

Turn-on Delay Time

-

1.4

-

Rise Time

-

40

-

Turn-off Delay Time

-

12.4

-

Fall Time

-

5.6

-

nS

Input Capacitance

-

220

-

Output Capacitance

-

38

-

Reverse Transfer Capacitance

-

32

-

pF

f=1MHz

Source-Drain Diode

Continuous Source Current

1

-

-

2.2

A

Pulsed Source Current

3

-

-

8

A

Diode Forward Voltage

4

-

-

1.2

V

Reverse Recovery Time

-

8.9

-

nS

Reverse Recovery Charge

-

1.7

-

nC

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board with 2OZ copper.

2.

When mounted on Min. copper pad.

3.

Pulse width limited by maximum junction temperature, Pulse Width ≤10µs, Duty Cycle≤1%.

4.

Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2%.