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ISCNH26F Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCNH26F Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor ISCNH26F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 250μA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250μA 2 4 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=10A 120 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ±100 nA IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V 1 μ A VSD Diode forward on voltage ISD =20A, VGS = 0 V 1.2 V |
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