CAT5115PI-50TESSOP datasheet(3/9 Pages) CATALYST

3 / 9 page

CAT5115

Doc. No. 2117, Rev. E

RELIABILITY CHARACTERISTICS

Symbol

Parameter

Test Method

Min

Typ

Max

Units

VZAP(1)

ESD Susceptibility

MIL-STD-883, Test Method 3015

2000

Volts

ILTH(1)(2)

Latch-Up

JEDEC Standard 17

100

TDR

Data Retention

MIL-STD-883, Test Method 1008

100

Years

NEND

Endurance

MIL-STD-883, Test Method 1003

1,000,000

Stores

Power Supply

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VCC

Operating Voltage Range

2.5

—

5.5

ICC1

Supply Current (Increment)

VCC = 5.5V, f = 1MHz, IW=0

——

100

µA

VCC = 5.5V, f = 250kHz, IW=0

——

ICC2

Supply Current (Write)

Programming, VCC = 5.5V

——

1mA

VCC = 3V

——

500

µA

ISB1 (2)

Supply Current (Standby)

CS=VCC-0.3V

——

µA

U/D, INC=VCC-0.3V or GND

OPERATION MODES

ABSOLUTE MAXIMUM RATINGS

Supply Voltage

VCC to GND ...................................... –0.5V to +7V

Inputs

CS to GND .............................–0.5V to VCC +0.5V

INC to GND ............................–0.5V to VCC +0.5V

D to GND ............................–0.5V to VCC +0.5V

H to GND ................................ –0.5V to VCC +0.5V

L to GND ................................ –0.5V to VCC +0.5V

W to GND ............................... –0.5V to VCC +0.5V

Operating Ambient Temperature

Industrial (‘I’ suffix) ...................... – 40

°C to +85°C

Junction Temperature ..................................... +150

°C

Storage Temperature ....................... –65

°C to +150°C

Lead Soldering (10 sec max) .......................... +300

°C

* Stresses above those listed under Absolute Maximum Ratings may

cause permanent damage to the device. Absolute Maximum Ratings

are limited values applied individually while other parameters are

within specified operating conditions, and functional operation at any

of these conditions is NOT implied. Device performance and reliability

may be impaired by exposure to absolute rating conditions for extended

periods of time.

NOTES:

(1) This parameter is tested initially and after a design or process change that affects the parameter.

(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC + 1V

(3) IW=source or sink

(4) These parameters are periodically sampled and are not 100% tested.

Rwi

Potentiometer

Equivalent Circuit

DC Electrical Characteristics: VCC = +2.5V to +5.5V unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Units

IIH

Input Leakage Current

VIN = VCC

——

µA

IIL

Input Leakage Current

VIN = 0V

——

–10

µA

VIH1

TTL High Level Input Voltage

4.5V

≤ VCC ≤ 5.5V

—

VCC

VIL1

TTL Low Level Input Voltage

—

0.8

VIH2

CMOS High Level Input Voltage

2.5V

≤ VCC ≤ 5.5V

VCC x 0.7

—

VCC + 0.3

VIL2

CMOS Low Level Input Voltage

-0.3

—

VCC x 0.2

Logic Inputs

INC

U/D

Operation

High to Low

Low

High

Wiper toward H

High to Low

Low

Wiper toward L

High

Standby

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