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TSM8588CS Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM8588CS Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page ![]() TSM8588CS Taiwan Semiconductor 2 Version: A1811 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS Q1 60 -- -- V VGS = 0V, ID = -250µA Q2 -60 -- -- Gate Threshold Voltage VGS = VDS, ID = 250µA VGS(TH) Q1 1.2 1.8 2.5 V VGS = VDS, ID = -250µA Q2 -1 -1.5 -2.5 Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS Q1 -- -- ±100 nA VGS = ±20V, VDS = 0V Q2 -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = 60V IDSS Q1 -- -- 1 µA VGS = 0V, VDS = -60V Q2 -- -- -1 Drain-Source On-State Resistance (Note 3) VGS = 10V, ID = 2.5A RDS(on) Q1 -- 74 103 m Ω VGS = 4.5V, ID = 2.3A -- 86 122 VGS = -10V, ID = -2A Q2 -- 135 180 VGS = -4.5V, ID = -1.7A -- 170 220 Forward Transconductance (Note 3) VDS = 10V, ID = 2.5A gfs Q1 -- 10 -- S VDS = -10V, ID = -2A Q2 -- 5 -- Dynamic (Note 4) Total Gate Charge Q1 VDS = 30V, ID = 2.5A Q2 VDS = -30V, ID = -2A Qg(VGS=10V) Q1 -- 9.4 -- nC Q2 -- 9 -- Total Gate Charge Qg(VGS=4.5V) Q1 -- 4.4 -- Q2 -- 4.6 -- Gate-Source Charge Qgs Q1 -- 1.8 -- Q2 -- 1.2 -- Gate-Drain Charge Qgd Q1 -- 2.3 -- Q2 -- 2.4 -- Input Capacitance Q1 VGS = 0V, VDS = 30V f = 1.0MHz Q2 VGS = 0V, VDS = -30V f = 1.0MHz Ciss Q1 -- 527 -- pF Q2 -- 436 -- Output Capacitance Coss Q1 -- 31 -- Q2 -- 32 -- Reverse Transfer Capacitance Crss Q1 -- 4 -- Q2 -- 11 -- Gate Resistance f = 1.0MHz Rg Q1 0.5 1.8 3.6 Ω Q2 5 17 34 Switching (Note 4) Turn-On Delay Time Q1 VGS = 10V, VDS = 30V, ID = 2.5A, RG = 2Ω Q2 VGS = -10V, VDS = -30V, ID = -2A, RG = 2Ω td(on) Q1 -- 5 -- ns Q2 -- 3.4 -- Turn-On Rise Time tr Q1 -- 21 -- Q2 -- 21 -- Turn-Off Delay Time td(off) Q1 -- 10 -- Q2 -- 21 -- Turn-Off Fall Time tf Q1 -- 17 -- Q2 -- 26 -- |
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