| Datenblatt-Suchmaschine für elektronische Bauteile |
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HZS2 Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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HZS2 Datenblatt(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page ![]() HZS Series Rev.3.00, Mar.11.2004, page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd 400 mW Junction temperature Tj 200 °C Storage temperature Tstg −55 to +175 °C Electrical Characteristics (Ta = 25°C) Zener Voltage Reverse Current Dynamic Resistance VZ (V)* 1 Test Condition IR (µA) Test Condition rd (Ω) Test Condition Type Grade Min Max IZ (mA) Max VR (V) Max IZ (mA) A1 1.6 1.8 A2 1.7 1.9 A3 1.8 2.0 5 25 0.5 100 5 B1 1.9 2.1 B2 2.0 2.2 B3 2.1 2.3 C1 2.2 2.4 C2 2.3 2.5 HZS2 C3 2.4 2.6 5 5 0.5 100 5 A1 2.5 2.7 A2 2.6 2.8 A3 2.7 2.9 B1 2.8 3.0 B2 2.9 3.1 B3 3.0 3.2 C1 3.1 3.3 C2 3.2 3.4 HZS3 C3 3.3 3.5 5 5 0.5 100 5 A1 3.4 3.6 A2 3.5 3.7 A3 3.6 3.8 B1 3.7 3.9 B2 3.8 4.0 B3 3.9 4.1 C1 4.0 4.2 C2 4.1 4.3 HZS4 C3 4.2 4.4 5 5 1.0 100 5 A1 4.3 4.5 A2 4.4 4.6 A3 4.5 4.7 B1 4.6 4.8 B2 4.7 4.9 HZS5 B3 4.8 5.0 5 5 1.5 100 5 Note: 1. Tested with DC. |
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