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ISCNH27B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCNH27B
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH27B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH27B
·
DESCRIPTION
·
Static drain-source on-resistance:
: RDS(on) ≤14mΩ
·
Drain Source Voltage
: VDSS= 100V(Min)
·
High density cell design for ultra low Rdson
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATIONS
.
·
Power switching application
·
Hard switched and high frequency circuits
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
100
A
IDM
Pulse Drain Current
380
A
PD
Max. Power Dissipation
200
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature Range
-55~175
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.75
℃
/W


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