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ISCNH34P Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer ISCNH34P
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH34P Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH34P
·
FEATURES
·
Drain Current –ID= 12A@ TC=25℃
·
Drain Source Voltage
: VDSS= 600V (Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.7Ω(Max)
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
DESCRITION
·
Designed for high efficiency switch mode power supply and
motor driving.
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
48
A
PD
Total power dissipation
200
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.8
℃
/W


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