2SD414 datasheet(2/4 Pages) NEC

Teilenummer	2SD414

Bauteilbeschribung	PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

PDF	4 Pages

Scroll/Zoom	100%

Hersteller	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

2 / 4 page

Data Sheet D16141EJ2V0DS

2SB548, 549/2SD414, 415

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

Note

Temperature T (

°C)

Note

Tc = 25

°C

Derate the dissipation limited

area by case temperature and

duty cycle.

S/b limited area is a single

pulse. Derate this area by

Collector to Emitter Voltage VCE (V)

Case Temperature Tc (

°C)

Collector to Emitter Voltage VCE (V)

Pulse Width PW (ms)

Collector to Emitter Voltage VCE (V)

Tc = 25

°C

Derate the dissipation limited

area by case temperature and

duty cycle.

S/b limited area is a single

pulse. Derate this area by case

temperature.

Note

1. 1 mm aluminum board

for heatsink

2. No insulating board

3. Silicon grease coating

4. Horizontal level

With infinite heatsink

Without te heatsink

Note

2SD414 Datenblatt(PDF) 2 Page - NEC