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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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FFM205AFG Datenblatt(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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FFM205AFG Datenblatt(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd. |
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1 / 3 page  SMAF 1. Cathode 2. Anode 2 1 2 FFM201AFG FFM202AFG FFM203AFG 50 100 200 35 70 140 SYMBOLS V RRM (V) V RMS V R (V) (V) *1 *2 *3 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@I =2.0A F *5 Maximum Reverse recovery time, note 1 V F (V) *4 FFM204AFG FFM205AFG 400 600 280 420 1.30 -55 to +150 FFM206AFG FFM207AFG 800 1000 560 700 PARAMETER CONDITIONS Forward rectified current Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT I O I FSM I R R θJA C J T STG A A μA OC/W OC pF 2.0 50 5.0 +150 -55 65 V = V T = 25 C R RRM J O V = V T = 125 C R RRM J O Junction to ambient 40 100 T RR (nS) *5 150 250 500 50 100 200 400 600 800 1000 (C) O Operating temperature T, J Note 1. Reverse recovery time test condition, I =0.5A, I =1.0A, I =0.25A FRRR FFM201AFG THRU FFM207AFG Chip Silicon Rectifier 2.0A Fast Recovery Rectifiers-50-1000V Batch process design, excellent power dissipation offers • better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. • • High current capability. • Fast switching for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead- free parts meet RoHS requirments. Features Maximum ratings (AT T =25 A oC unless otherwise noted) @ 2018 Copyright By American First Semiconductor REV:1.0 Page 1/3 |
Ähnliche Teilenummer - FFM205AFG |
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Ähnliche Beschreibung - FFM205AFG |
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