SM1A40CSQ datasheet(3/14 Pages) SINOPWER

3 / 14 page

SM1A40CSQ

www.sinopowersemi.com

Rev. A.2 - December, 2015

N Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

N Channel

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

100

VDS=80V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

VGS=10V, IDS=2.5A

135

162

VGS=4.5V, IDS=2A

140

182

RDS(ON)

Drain-Source On-state Resistance

VGS=4.0V, IDS=2A

145

203

Diode Characteristics

VSD

Diode Forward Voltage

ISD=2A, VGS=0V

0.8

1.3

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD=2.5A, dlSD/dt=100A/ms

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,f=1MHz

Ciss

Input Capacitance

440

572

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=30V,

Frequency=1.0MHz

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

VDD=30V, RL=30W,

IDS=1A, VGEN=10V,

RG=6W

Gate Charge Characteristics

Total Gate Charge

VDS=30V, VGS=4.5V,

IDS=2.5A

4.8

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=30V, VGS=10V,

IDS=2.5A

Note e：Pulse test ; pulse width

£300ms, duty cycle£2%.

Note f：Guaranteed by design, not subject to production testing.

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