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GD25Q80CSIG Datenblatt(PDF) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q80CSIG Datenblatt(HTML) 44 Page - GigaDevice Semiconductor (Beijing) Inc. |
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44 / 67 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q80C 44 Figure 38. Maximum Negative and Positive Overshoot Waveform 8.4. CAPACITANCE MEASUREMENT CONDITIONS Symbol Parameter Min Typ Max Unit Conditions CIN Input Capacitance 6 pF VIN=0V COUT Output Capacitance 8 pF VOUT=0V CL Load Capacitance 30 pF Input Rise And Fall time 5 ns Input Pulse Voltage 0.1VCC to 0.8VCC V Input Timing Reference Voltage 0.2VCC to 0.7VCC V Output Timing Reference Voltage 0.5VCC V Figure 39. Input Test Waveform and Measurement Level 0.8VCC 0.1VCC 0.7VCC 0.2VCC 0.5VCC AC Measurement Level Input timing reference level Output timing reference level Note: Input pulse rise and fall time are <5ns Vss 20ns Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 20ns 20ns Vss-2.0V Vcc 20ns 20ns 20ns Vcc + 2.0V |
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