SM7302ESKP datasheet(4/16 Pages) SINOPWER

4 / 16 page

SM7302ESKP

www.sinopowersemi.com

Rev. A.6 - January, 2018

Channel 2 Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Channel 2

Unit

Min.

Typ.

Max.

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=85°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250mA

1.4

1.8

2.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

RDS(ON)

Drain-Source On-state Resistance

VGS=10V, IDS=30A

3.3

TJ=125°C

4.9

VGS=4.5V, IDS=15A

4.5

5.9

Gfs

Forward Transconductance

VDS=5V, IDS=10A

Diode Characteristics

VSD

Diode Forward Voltage

ISD=1A, VGS=0V

0.8

1.1

trr

Reverse Recovery Time

IDS=30A, dlSD/dt=100A/ms

Charge Time

Discharge Time

Qrr

Reverse Recovery Charge

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.3

2.6

Ciss

Input Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

1280

1664

Coss

Output Capacitance

800

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=15V, RL=15W,

IDS=1A, VGEN=10V,

RG=6W

14.3

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

32.6

Gate Charge Characteristics

Total Gate Charge

VDS=15V, VGS=4.5V,

IDS=30A

9.1

Total Gate Charge

VDS=15V, VGS=10V,

IDS=30A

19.6

27.5

Qgth

Threshold Gate Charge

2.2

Qgs

Gate-Source Charge

3.5

Qgd

Gate-Drain Charge

2.4

Note d：Pulse test; pulse width

£300

ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

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