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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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PRM9R0N06N5 Datenblatt(PDF) 1 Page - PFC Device Inc. |
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PRM9R0N06N5 Datenblatt(HTML) 1 Page - PFC Device Inc. |
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1 / 8 page  60V Single N-Channel MOSFET July-2017 Version 4.1 1 / 8 PFC Device Corporation PRM9R0N06N5 www.pfc-device.com Major ratings and characteristics Characteristics Values Units VDS 60 V ID 5 (T C=25℃) 30 A Max. RDS(ON)@VGS=10V 9 m Max. RDS(ON)@VGS=4.5V 11.5 m TJ Operating Junction Temperature -55 to +150 oC General Description The N-Channel enhancement mode power field effect transistor is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency fast switching applications. Typical Applications Charger Adapter Power Tools LED Lighting Features Max. RDS(ON)=9mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available PRM9R0N06N5 DFN 5x6 G D S S S D D D |
Ähnliche Teilenummer - PRM9R0N06N5 |
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Ähnliche Beschreibung - PRM9R0N06N5 |
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