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PRM9R0N06S8 Datenblatt(PDF) 1 Page - PFC Device Inc.

Teilenummer PRM9R0N06S8
Bauteilbeschribung  60V Single N-Channel MOSFET
PDF  8 Pages
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Hersteller  PFC [PFC Device Inc.]
Direct Link  http://www.pfc-device.com/eng/index.php
Logo PFC - PFC Device Inc.

PRM9R0N06S8 Datenblatt(HTML) 1 Page - PFC Device Inc.

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60V Single N-Channel MOSFET
Oct-2018
Version 4.1
1 / 8
PFC Device Corporation
PRM9R0N06S8
www.pfc-device.com
Major ratings and characteristics
Characteristics
Values
Units
VDS
60
V
ID (TA=25℃)
13
A
Max. RDS(ON)@VGS=10V
9
m
Max. RDS(ON)@VGS=4.5V
11.5
m
TJ Operating Junction
Temperature
-55 to +150
oC
General Description
The N-Channel enhancement mode power
field effect transistor is using trench DMOS
technology. This advanced technology has
been especially tailored to minimize
on-state resistance, provide superior
switching performance, and withstand high
energy pulse in the avalanche and
commutation mode. The device is well
suited for high efficiency fast switching
applications.
Typical Applications
 Charger Adapter
 Power Tools
 LED Lighting
Features
 Max. RDS(ON)=9mΩ@VGS=10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
PRM9R0N06S8
SOP-8
G
S S
S
D D
D D


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