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2SC5894 Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SC5894
Bauteilbeschribung  Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
PDF  10 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5894 Datenblatt(HTML) 3 Page - Renesas Technology Corp

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2SC5894
Rev.2.00 Aug 10, 2005 page 3 of 9
Main Characteristics
0
50
100
150
200
100
10
100
200
0
1
20
25
50
VCE = 2 V
0
0.4
0.6
1
0.2
0.8
VCE = 2 V
50
100
15
5
20
10
10
20
30
40
50
150
50
01
2
3
4
IB = 20 µA
40
µA
60
µA
80
µA
100
µA
120
µA
140
µA
160
µA
180
µA
200
µA
Collector Power Dissipation Curve
Ambient Temperature
Ta (°C)
Typical Output Characteristics
Collector to Emitter Voltage
VCE (V)
Typical Transfer Characteristics
Base to Emitter Voltage
VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Current
IC (mA)
0.2
0.4
0.6
0.8
1.0
01
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
-1
1
0
0
IE = 0
f = 1 MHz
VEB = 0
f = 1 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
Emitter Input Capacitance vs.
Emitter to Base Voltage
Emitter to Base Voltage VEB (V)



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