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BC548A Datenblatt(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

Teilenummer BC548A
Bauteilbeschribung  NPN General Purpose Amplifier
PDF  1 Pages
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Hersteller  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
Direct Link  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

BC548A Datenblatt(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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BC548/BC548A/BC548B/BC548C
NPN General Purpose Amplifier
www.artschip.com
1
This device is designed for use as general purpose amplifier and switches requiring collector currents to 300Ma.
Sourced from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings * TA=25
℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
30
V
VCES
Collector-Base Voltage
30
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current –Continuous
500
mA
TJ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
℃
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Notes:
1)
These rating are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA=25℃ unless otherwise noted
Max
Symbol
Characteristic
BC548/A/B/C
Units
PD
Total Device Dissipation
Derate above 25
℃
625
5.0
mW
mW/
℃
R ӨJC
Thermal Resistance, Junction to Case
83.3
℃/W
R ӨJA
Thermal Resistance, Junction to Ambient
200
℃/W
Electrical Characteristics
TA=25
℃ unless otherwise Noted
Symbol
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
Ic=10mA, IB=0
30
V
V(BR)CBO
Collector-Emitter Breakdown Voltage
Ic=10µA, IE=0
30
V
V(BR)CES
Collector-Base Breakdown Voltage
Ic=10µA, IE=0
30
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=30V, IE=0
5.0
ICBO
Collector Cutoff Current
VCB=30V, IE=0
VCB=30V, IE=0, TA=+150
℃
15
5.0
nA
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE=5.0V, Ic=2.0mA 548
548A
548B
548C
110
110
200
420
800
220
450
800
VCE(sat)
Collector-Emitter Saturation
Ic=10mA, IB=0.5mA
Ic=100mA, IB=5.0mA
0.25
0.60
V
V
VBE(on)
Base-Emitter On Voltage
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA
0.58
0.70
0.77
V
V


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