SM3040CSU4 datasheet(4/16 Pages) SINOPWER

4 / 16 page

SM3040CSU4

www.sinopowersemi.com

Rev. A.4 - February, 2015

P Channel Electrical Characteristics (T

A = 25°C unless otherwise noted)

P Channel

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250µA

-30

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

-30

µA

VGS(th)

Gate Threshold Voltage

DS=VGS, IDS=-250µA

-1.3

-1.8

-2.3

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=-10V, IDS=-12A

37.5

RDS(ON)

Drain-Source On-state Resistance

VGS=-4.5V, IDS=-5A

Ω

Diode Characteristics

VSD

Diode Forward Voltage

ISD=-1A, VGS=0V

-0.75

-1

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

DS=-12A, dlSD /dt=100A/µs

Dynamic Characteristics

Gate Resistance

GS=0V,VDS=0V,F=1MHz

3.3

6.6

Ω

iss

Input Capacitance

580

754

oss

Output Capacitance

105

rss

Reverse Transfer Capacitance

VGS=0V,

VDS=-15V,

Frequency=1.0MHz

d(ON)

Turn-on Delay Time

8.7

Turn-on Rise Time

d(OFF)

Turn-off Delay Time

Turn-off Fall Time

DD=-15V, RL=15Ω,

DS=-1A, VGEN=-10V,

RG=6

Ω

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=-15V, VGS=-10V,

IDS=-12A

Note d：Pulse test; pulse width

≤300µs, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

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