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W256 Datenblatt(PDF) 4 Page - Cypress Semiconductor

Teilenummer W256
Bauteilbeschribung  12 Output Buffer for 2 DDR and 3 SRAM DIMMS
PDF  9 Pages
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Hersteller  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

W256 Datenblatt(HTML) 4 Page - Cypress Semiconductor

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W256
Document #: 38-07256 Rev. *C
Page 4 of 9
Maximum Ratings
Supply Voltage to Ground Potential ..................–0.5 to +7.0V
DC Input Voltage (except BUF_IN) ............ –0.5V to VDD+0.5
Storage Temperature .................................. –65°C to +150°C
Static Discharge Voltage ............................................>2000V
(per MIL-STD-883, Method 3015)
Operating Conditions[2]
Parameter
Description
Min.
Typ.
Max.
Unit
VDD3.3
Supply Voltage
3.135
3.465
V
VDD2.5
Supply Voltage
2.375
2.625
V
TA
Operating Temperature (Ambient Temperature)
0
70
°C
COUT
Output Capacitance
6
pF
CIN
Input Capacitance
5
pF
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Typ.
Max.
Unit
VIL
Input LOW Voltage
For all pins except SMBus
0.8
V
VIH
Input HIGH Voltage
2.0
V
IIL
Input LOW Current
VIN = 0V
50
µA
IIH
Input HIGH Current
VIN = VDD
50
µA
IOH
Output HIGH Current
VDD = 2.375V
VOUT = 1V
–18
–32
mA
IOL
Output LOW Current
VDD = 2.375V
VOUT = 1.2V
26
35
mA
VOL
Output LOW Voltage[3]
IOL = 12 mA, VDD = 2.375V
0.6
V
VOH
Output HIGH Voltage[3]
IOH = –12 mA, VDD = 2.375V
1.7
V
IDD
Supply Current[3]
(DDR-Only mode)
Unloaded outputs, 133 MHz
400
mA
IDD
Supply Current
(DDR-Only mode)
Loaded outputs, 133 MHz
500
mA
IDDS
Supply Current
PWR_DWN# = 0
100
µA
VOUT
Output Voltage Swing
See Test Circuity (Refer to
Figure 1)
0.7
VDD + 0.6
V
VOC
Output Crossing Voltage
(VDD/2)
–0.1
VDD/2
(VDD/2)
+0.1
V
INDC
Input Clock Duty Cycle
48
52
%
Notes:
2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
3. Parameter is guaranteed by design and characterization. Not 100% tested in production.



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