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DAM95N65D Datenblatt(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM95N65D Datenblatt(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page ![]() N-Channel Enhancement Mode MOSFET Features VDSS = 65V RDS(ON) Typ.2.7mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 65 V Gate Source Voltage VGS +20/-12 V Drain Current Continuous @ TC = 25°C ID 95 A @ TC = 100°C 60 Drain Current Pulsed@ TC = 25°C IDM 380 A Single Pulse Avalanche Energy EAS 245 mJ Single Pulse Avalanche Current IAS 70 A Maximum Power Dissipation PD 130 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case RθJC 0.96 °C/W Apr.2018 DAM95N65D Note3 |
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Ähnliche Beschreibung - DAM95N65D |
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