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EMD02N60CSK Datenblatt(PDF) 4 Page - Excelliance MOS Corp.

Teilenummer EMD02N60CSK
Bauteilbeschribung  N?륝hannel Logic Level Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Hersteller  EXCELLIANCE [Excelliance MOS Corp.]
Direct Link  http://www.excelliancemos.com/
Logo EXCELLIANCE - Excelliance MOS Corp.

EMD02N60CSK Datenblatt(HTML) 4 Page - Excelliance MOS Corp.

  EMD02N60CSK Datasheet HTML 1Page - Excelliance MOS Corp. EMD02N60CSK Datasheet HTML 2Page - Excelliance MOS Corp. EMD02N60CSK Datasheet HTML 3Page - Excelliance MOS Corp. EMD02N60CSK Datasheet HTML 4Page - Excelliance MOS Corp. EMD02N60CSK Datasheet HTML 5Page - Excelliance MOS Corp.  
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2015/3/27 
p.4 
EMD02N60CSK
2
V   ,Gate‐Source Voltage( V )
0
3
1
4
GS
DS
V   = 10V
2
4
5
3
5
6
7
A
Transfer Characteristics
T   = ‐55 °C
25 °C
125 °C
Body Diode Forward Voltage Variation
with Source Current and Temperature
25°C
T   = 125°C
V   ‐ Body Diode Forward Voltage( V )
0.001
0
0.01
0.1
0.4
SD
0.2
0.6
V    = 0V
1
10
100
A
GS
1.0
0.8
1.2
‐55°C
1.4
50
All o w a b l e  Pow e r  Di s s i p a t io n
0
10
20
c
0
25
40
30
50
60
150
100
75
125
T  ,C a s e  Te m p e r at u r e (  °C   )
50
On‐Resistance Variation with Temperature
0.6
‐50
0.8
1.0
j
‐25
0
25
1.4
1.2
1.6
1.8
150
100
75
125
T ,Junction Temperature(°C )
50
Gate Threshold Voltage v.s. Temperature
0
‐50
1.0
2.0
j
‐25
0
25
4.0
3.0
5.0
6.0
150
100
75
125
T ,Junction Temperature(°C )
V   ,Drain‐Source Voltage( V )
Typical Output Characteristics
2
10
0
0
1
30
DS
20
40
10V
4
3
5
Vgs=20V
7.5V
50
60
7V
8V
TYPICAL CHARACTERISTICS 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 



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