2KA2001 datasheet(1/2 Pages) KEXIN

Teilenummer	2KA2001

Bauteilbeschribung	PNP Transistors

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

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Features

Absolute Maximum Ratings Ta = 25

Electrical Characteristics Ta = 25

PNP Transistors

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-40

Collector - Emitter Voltage

VCEO

-40

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-0.2

A

Collector Power Dissipation

PC

0.2

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

Classification of hfe(1)

Type

-L

-H

Range

100-300

100-200

200-300

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 A

IE=0

-40

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA

IB=0

-40

Emitter - base breakdown voltage

VEBO

IE= -100

A

IC=0

-6

Collector-base cut-off current

ICBO

VCB= -40 V , IE=0

-100

Collector- emittercut-off current

ICEX

VCE=- 30 V , VEB(off =3V

-50

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

IC=-10 mA, IB=- 1mA

-0.2

IC=-50 mA, IB= -5mA

-0.3

IC= -10 mA, IB= -1mA

-0.65

-0.85

IC= -50 mA, IB= -5mA

-0.95

hfe

1

VCE= -1V, IC= -10mA

100

300

hfe

2

VCE= -1V, IC=-50mA

60

hfe

3

VCE= -1V, IC=-100mA

30

Delay time

td

VCC=-3.0V,VBE=0.5V

35

Rise time

tr

IC=-10mA,IB1=-1.0mA

35

Storage time

ts

VCC=-3.0V,IC=-10mA

225

Fall time

tf

IB1=IB2=-1.0mA

75

V

ns

nA

DC current gain

VCE(sat)

Collector-emitter saturation voltage

Base - emitter saturation voltage

VBE(sat)

12

3

Collector input capacitance

Cib

VEB= -0.5V, IE= 0,f=1MHz

10

Collector output capacitance

Cob

VCB= -5V, IE= 0,f=1MHz

4.5

Transition frequency

fT

VCE= -20V, IC= -10mA,f=100MHz

250

MHz

pF

Complementary to

Marking: 2A

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