2KA2002 datasheet(1/2 Pages) KEXIN

Teilenummer	2KA2002

Bauteilbeschribung	PNP Transistors

PDF	2 Pages

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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PNP Transistors

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-60

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

600

mA

Power Dissipation

PD

250

mW

Thermal resistance from junction to ambient

R JA

500

/W

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

V

Electrical Characteristics Ta = 25

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC = -100

A, IE = 0

-60

V

Collector-Emitter Breakdown Voltage*

V(BR)CEO

IC = -10 mA, IB = 0

-60

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = -100

A, IC = 0

-5

V

Collector Cutoff Current

ICBO

VCB = -50 V, IE = 0

-20

nA

Collector Cutoff Current

ICEX

VCE = -30 V,VEB(off) =0.5V

-50

nA

VCE=-10V,IC=-0.1mA

75

VCE=-10V,IC=-1mA

100

VCE=-10V,IC=-10mA

100

VCE=-10V,IC=-150mA

100

300

VCE=-10V,IC=-500mA

50

IC = -150 mA, IB = -15 mA

-0.4

V

IC = -500 mA, IB = -50 mA

-1.6

V

IC = -150 mA, IB = -15 mA

-1.3

V

IC = -500 mA, IB = -50 mA

-2.6

V

Current Gain - Bandwidth Product

fT

VCE=-20V,IC=-50mA,f=100MHz

200

MHz

Delay Time

td

10

ns

Rise Time

tr

40

ns

Storage Time

ts

80

ns

Fall Time

tf

30

ns

* Pulse test: Pulse width

, duty cycle

2.0%

VBE(sat)

Base-Emitter Saturation Voltage *

VCC = -30 V, IC = -150 mA,IB1 = -15 mA

VCC = -6.0 V, IC = -150 mA,IB1 = IB2 = -15

mA

VCE(sat)

Collector-Emitter Saturation Voltage *

DC Current Gain

hFE

Marking

12

3

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