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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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DAM65N100G Datenblatt(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM65N100G Datenblatt(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N-Channel Enhancement Mode MOSFET Features VDSS = 100V RDS(ON) Typ.6mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 100 V Gate Source Voltage VGS +20/-12 V Drain Current Continuous @ Tc = 25°C ID 65 A @ Tc = 100°C 41.1 Drain Current Pulsed@ TC = 25°C IDM 260 A Single Pulse Avalanche Energy EAS 231 mJ Single Pulse Avalanche Current IAS 68 A Maximum Power Dissipation PD 139 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 0.9 °C/W Mar.2018 DAM65N100G Note3 |
Ähnliche Teilenummer - DAM65N100G |
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Ähnliche Beschreibung - DAM65N100G |
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