STTH3006TPI datasheet(2/5 Pages) STMICROELECTRONICS

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STTH3006TPI

2/5

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage current

VR =VRRM

Tj = 25°C

µA

Tj = 125°C

400

VF **

Forward voltage drop

IF = 30A

Tj=25

°C

3.6

Tj = 125°C

2.1

2.6

Pulse test : * tp = 100 ms,

δ <2%

** tp = 380

µs, δ <2%

To evaluate the maximum conduction losses use the following equation :

P=1.8xIF(AV) + 0.026 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (for both diodes)

Symbol

Parameter

Test conditions

Value

Unit

Rth (j-c)

Junction to case thermal resistance

Total

1.3

°C/W

Conduction power dissipation for

both diodes

IF(AV) =30A

δ = 0.5

Tc = 20°C

100

THERMAL AND POWER DATA

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery

time

IF = 0.5 A

Irr = 0.25 A

IR =1A

Tj = 25°C

IF =1A

dIF/dt=-50 A/µs

VR =30V

IRM

Reverse recovery

current

VR = 400 V IF =30A

dIF/dt = -200 A/µs

Tj = 125°C

6.7

8.5

Reverse recovery

softness factor

0.3

DYNAMIC CHARACTERISTICS (for both diodes)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

tfr

Forward recovery

time

IF =30A dIF/dt = 100 A/µs

VFR =1.1xVF max

Tj = 25°C

400

VFP

Transient peak

forward recovery

voltage

IF =30A dIF/dt = 100 A/µs Tj = 25°C

TURN-ON SWITCHING CHARACTERISTICS (for both diodes)

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