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SC32300A/B.EVB Datenblatt(PDF) 11 Page - Semtech Corporation |
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SC32300A/B.EVB Datenblatt(HTML) 11 Page - Semtech Corporation |
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11 / 18 page ![]() SC32300B 11 FCCM/Diode Emulation Mode Operation There are two operating modes which can be configured with the FCCM pin of the SC32300B. When the FCCM pin is floated or tied to a logic high signal (e.g. VDD), the drive signal DL is always complementary to DH. This is called forced continuous conduction mode (FCCM) operation. If the FCCM pin is grounded, a zero-crossing circuit is activated in the SC32300B. The DL output is turned to low when the current in the external low-side MOSFET reaches zero. In other words, the external low-side MOSFET acts like a diode. This operation mode is thus called diode emulation mode. The benefit of this diode emulation mode is to reduce conduction losses at light load for high efficiency. SmartdriveTM For each DH drive pulse, the SC32300B initially turns on the high-side MOSFET with a weak driver, allowing a softer, smooth turnoff of the low-side MOSFET. Once the low-side MOSFET is turned off and the LX pin voltage has risen about 2.5V above ground, the SC32300B switches to a much stronger driver to complete the turn-on of the high-side MOSFET at a more rapid rate. This technique reduces the voltage ringing for the switching node, which relieves the need for a snubber or a gate resistor. Bootstrap Capacitor The SC32300B integrates the bootstrap switch. Only an external bootstrap capacitor connected between the BST pin and the LX pin is needed for a complete bootstrap circuit.Thebootstrapcapacitor,whichischargedfromVDD during the on time of the low-side MOSFET, provides the energy to turn on the high-side MOSFET. The capacitance for the bootstrap capacitor is mainly determined by the gate charge Q g of the high-side MOSFET. The equation below gives a first order estimate: C b = Qg / ΔVb Where ΔV b is the allowable voltage drop of the drive voltage for the high-side MOSFET. In a real application, considering the capacitance tolerance, Q g variation, leakage current of the BST pin etc., a capacitor with two times the calculated value is a good starting point. A ceramic capacitor of X5R or X7R, or equivalent material, should be used. VLDO Decoupling Capacitor The VLDO pin is the 3.3V LDO output pin. This 3.3V LDO can be used as the bias for a microcontroller or any other digital controller which requires quite, accurate 3.3V bias on the system board. A high frequency decoupling capacitor with low ESR and low ESL should be put from the VLDO pin to the GND pin with minimum trace length. A typical value of 2.2µF, 6.3V rating, X5R or X7R ceramic capacitor is recommended. VDD Decoupling Capacitor The VDD is the input bias for the low-side driver and the internal control circuitry. This pin is also used for the VDD UVLO check. A high frequency decoupling capacitor with low ESR and low ESL should be put from the VDD pin to the GND pin with minimum trace length. A typical value of 2.2µF, 10V rating, X5R or X7R ceramic capacitor is recommended. Power Dissipation The power dissipation in this driver consists of two main components: the power loss for turning on and off the external MOSFETs, and the power loss in the internal LDO (if used). The below equation can be used to estimate the total power dissipation in the driver: P d = VDD fs (Qgh + Qgl) + (VDD - 3.3) IL Where: f s is the switching frequency Q gh is the total gate charge of the high-side MOSFET Q gl is the total gate charge of the low-side MOSFET I L is the external load connected to the VLDO pin To ensure proper operation and long-term reliability, the power dissipation should be examined in the real application to make sure the junction temperature will not go beyond 125OC. Multiple vias should be used to connect the thermal pad underneath the driver package to the ground plane on the system board for good thermal Application Information (Continued) |
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