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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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GD25LE32D Datenblatt(PDF) 60 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE32D Datenblatt(HTML) 60 Page - GigaDevice Semiconductor (Beijing) Inc. |
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60 / 72 page  1.8V Uniform Sector Dual and Quad Serial Flash GD25LE32D 60 (T= -40℃~105℃, VCC=1.65~2.0V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit. fC Serial Clock Frequency For: all command except for 03H 80 MHz fR Serial Clock Frequency For: Read (03H) 60 MHz tCLH Serial Clock High Time 4 ns tCLL Serial Clock Low Time 4 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.1 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.1 V/ns tSLCH CS# Active Setup Time 5 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 1.2 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH Hold# Low Setup Time (Relative To Clock) 5 ns tHHCH Hold# High Setup Time (Relative To Clock) 5 ns tCHHL Hold# High Hold Time (Relative To Clock) 5 ns tCHHH Hold# Low Hold Time (Relative To Clock) 5 ns tHLQZ Hold# Low To High-Z Output 7 ns Clock Low To Output Valid (CL = 15pF) 6 ns tHHQX Hold# High To Low-Z Output 7 ns tCLQV Clock Low To Output Valid 7 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 20 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 22 μs tRES2 CS# High To Standby Mode With Electronic Signature Read 22 μs tSUS CS# High To Next Command After Suspend 20 μs tRS Latency Between Resume And Next Suspend 100 μs tRST CS# High To Next Command After Reset (Except From Erase) 30 μs tRST_E CS# High To Next Command After Reset (From Erase) 12 ms tW Write Status Register Cycle Time 5 35 ms tPP Page Programming Time 0.7 3.5 ms tSE Sector Erase Time 90 600 ms tBE1 Block Erase Time (32K Bytes) 0.3 1.4 s tBE2 Block Erase Time (64K Bytes) 0.45 2.5 s tCE Chip Erase Time (GD25LE32D) 20 80 s Note: 1. Typical values given for TA=25°C. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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