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GD25Q256DFER Datenblatt(PDF) 79 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q256DFER Datenblatt(HTML) 79 Page - GigaDevice Semiconductor (Beijing) Inc. |
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79 / 89 page ![]() 3.3V Uniform Sector Dual and Quad Serial Flash GD25Q256D 79 tBP1 Byte Program Time (First Byte) 30 60 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 15 μs tPP Page Programming Time 0.4 2.5 ms tSE Sector Erase Time 70 450 ms tBE1 Block Erase Time (32K Bytes) 0.16 1.2 s tBE2 Block Erase Time (64K Bytes) 0.22 1.6 s tCE Chip Erase Time (GD25Q256D) 70 260 s Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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