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4665A Datenblatt(PDF) 3 Page - KIA Semiconductor Technology

Teilenummer 4665A
Bauteilbeschribung  7.5A650V N-CHANNEL MOSFET
PDF  6 Pages
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Hersteller  KIA [KIA Semiconductor Technology]
Direct Link  http://en.kiaic.com/
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4665A Datenblatt(HTML) 3 Page - KIA Semiconductor Technology

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7.5A 650V
N-CHANNEL MOSFET
KIA
SEMICONDUCTORS
4665A
KIA
SEMICONDUCTORS
KIA
SEMICONDUCTORS
7. Electrical characteristics
(TC= 25ºC , unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V,ID = 250 uA
650
--
--
V
△BVDSS Breakdown Voltage Temperature
Coefficient
ID = 250 uA,
Referenced to 25 ºC
--
0.65
--
V/ºC
/ △TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V,VGS = 0V
--
--
1
uA
VDS = 520 V,TC = 125 ºC
--
--
10
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V,VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V,VDS = 0V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250 uA
2.0
--
4.0
V
RDS(on)
Static Drain-Source On-Resistance
VGS = 10 V,ID = 3.75A
--
1.1
1.4
Ω
gFS
Forward Transconductance
VDS = 40 V,ID = 3.75A (Note 4)
--
6.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V,VGS = 0 V,
f = 1.0 MHz
--
970
--
pF
Coss
Output Capacitance
--
40
--
pF
Crss
Reverse Transfer Capacitance
--
9
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 325 V,ID = 7.5 A,
RG = 25
Ω (Note 4.5)
--
28
--
ns
tr
Turn-On Rise Time
--
21
--
ns
td(off)
Turn-Off Delay Time
--
100
--
ns
tf
Turn-Off Fall Time
--
42
--
ns
Qg
Total Gate Charge
VDS = 520 V,ID = 7.5 A,
VGS = 10V (Note 4, 5)
--
25
--
nC
Qgs
Gate-Source Charge
--
5.5
--
nC
Qgd
Gate-Drain Charge
--
10
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
30
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V,IS = 7.5A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V,IS = 7.5 A,
dIF / dt = 100 A/us (Note 4)
--
580
--
ns
Qrr
Reverse Recovery Charge
--
5.3
--
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH,IAS = 7.5A,VDD = 50V,RG = 25Ω, StartingTJ = 25°C
3.ISD
≤ 7.5A, di/dt ≤ 200A/us,V
DD
≤B
VDSS
, StartingTJ = 25°C
4. Pulse Test: Pulse width
≤ 300us, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
3 of6
Rev 1.0 MAR 2017



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